Mode of damage caused by electrostatic discharge to microelectronic circuits
The metal wiring and the diffusion region (or polycrystalline) contact hole generate a spark, causing the ohmic contact of the metal and silicon to be broken.
When the temperature of the node exceeds the melting point of the semiconductor silicon (1415 ° C), the silicon is melted to cause recrystallization, causing a short circuit of the device. The metallized electrodes and wiring are melted and "spheroidized", causing the circuit to open. A large current flows through the PN junction to generate Joule heat, which causes the junction temperature to rise, forming a "hot spot" or "hot run", causing damage to the device. Instantaneous high current (static spark) caused by electrostatic discharge ignites and ignites flammable and explosive gases. Mixtures or electric fireworks, causing accidental burning and explosion accidents.
Electrostatic discharge causes the human body to suffer from electric shocks, causing secondary accidents and the Coulomb force of the electrostatic field to hinder the automated production lines such as textile, printing and plastic packaging. The third type of electrostatic hazard is caused by electromagnetic radiation caused by electrostatic discharge or electromagnetic interference caused by electrostatic discharge electromagnetic pulse (ESDEMP) on electronic equipment.
In general, electrostatic discharges are performed on the order of microseconds or sodium seconds, so this process is an adiabatic process in which a large current is passed through the loop to form a localized high temperature heat source. For microelectronic devices, the electrostatic discharge energy is released through the device, and the average power can reach several kilowatts. The heat is difficult to spread out from the power dissipation surface, thus forming a large temperature gradient in the device, causing local thermal damage. Circuit performance deteriorates or fails.