What are the damages of ESD to electronic devices
ESD damage to electronic devices ESD damage to electronic devices, no matter whether ESD directly discharges electronic devices or indirectly discharges electronic devices, electronic devices can be damaged. It can not only cause sudden failure of device function, but also cause potential failure of device function.
1. Sudden failure
Sudden failure means that when an electronic device is exposed to an ESD environment, the circuit parameters may change significantly and its function may be lost. ESD may cause the metal to melt and cause a short circuit or breakdown of the insulation layer, etc., causing permanent damage to the circuit of the device. Such failures can be detected in finished product testing before shipment. According to relevant statistics, among electronic devices damaged by static electricity, sudden failures account for about 10% of the total failures.
A strong electrostatic field will cause the gate oxide layer of the MOS field-effect device to be broken down and cause the device to fail. Generally, the gate oxide film thickness of MOS devices is on the order of 1 (T7 m). When the circuit design does not take protective measures, even a dense and pinhole-free high-quality oxide layer will be broken down under an electrostatic voltage of 100 V. For For circuits with protective measures, although the breakdown voltage may be higher than 100 V, the voltage of dangerous static power sources may be several thousand volts or even tens of thousands of volts. Therefore, the breakdown effect of high-voltage electrostatic fields is still a major hazard to MOS circuits. In addition, the high-voltage electrostatic field may also cause dielectric breakdown between multilayer wiring circuits or dielectric breakdown between metallized wires, causing circuit failure.
2. Potential failure
Potential failure means that when the device is exposed to the ESD environment, it may cause partial degradation of the device's performance, but temporarily does not affect its proper function. However, the service life of the device is greatly shortened. This damage is cumulative. As the number of ESD pulses experienced increases, the electrostatic damage voltage threshold of the device is gradually reduced, or the parameters of the device slowly deteriorate. According to statistics, potential failures account for 90% of the total number of ESD failures in electronic devices. Therefore, the potential failure of electronic devices is more harmful.